IXTA90N055T Datasheet | Specifications & PDF Download

IXTA90N055T Power MOSFET

Preliminary Technical Information TrenchMVTM Powe.

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA E

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.8mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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