Preliminary Technical Information TrenchMVTM Powe.
IXTA90N055T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.8mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.IXTA90N055T2 - Power MOSFET
TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA E.IXTA90N055T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).IXTA90N055T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.