isc N-Channel MOSFET Transistor ·FEATURES ·Stat.
INCHANGE
IXTC200N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot vari.
IXYS Corporation
IXTC200N085T - Power MOSFET
Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche .
