Preliminary Technical Information TrenchHVTM Powe.
IXYS
IXTH102N20T - Power MOSFET
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.
INCHANGE
IXTH102N20T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.
