Preliminary Technical Information TrenchMVTM Powe.
IXYS Corporation
IXTH240N055T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
INCHANGE
IXTH240N055T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.