Preliminary Technical Information TrenchT2TM Powe.
IXYS
IXTP100N04T2 - Power MOSFET
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA100N04T2 IXTP100N04T2 VDSS = 40V ID25 = 10.
INCHANGE
IXTP100N04T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP100N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7mΩ@VGS=10V ·Fully characterized avalanche volt.