IXTP110N055T Datasheet | Specifications & PDF Download

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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isc N-Channel MOSFET Transistor IXTP110N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche v

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isc N-Channel MOSFET Transistor IXTP110N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche vo

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