IXTP110N12T2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP110N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche vol

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TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode

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