IXTP130N065T2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP130N065T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche v

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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N065T2 IXTP130N065T2 VDSS = ID25 = RDS(

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