IXTP130N10T Datasheet | Specifications & PDF Download

IXTP130N10T Power MOSFET

TrenchMVTM Power MOSFET N-Channel Enhancement Mode.

isc N-Channel MOSFET Transistor IXTP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vol

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA)

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