Preliminary Technical Information TrenchMVTM Powe.
IXYS Corporation
IXTP160N075T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
INCHANGE
IXTP160N075T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP160N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.0mΩ@VGS=10V ·Fully characterized avalanche vo.