Preliminary Technical Information TrenchMVTM Powe.
IXYS Corporation
IXTP182N055T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA182N055T IXTP182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o.
INCHANGE
IXTP182N055T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTP182N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche vo.
