IXTP220N055T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP220N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.0mΩ@VGS=10V ·Fully characterized avalanche vo

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N055T IXTP220N055T VDSS = ID25 = RDS(on

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