IXTP2N100P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP2N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche volta

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N100P IXTA2N100P IXTP2N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD

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