IXTQ102N20T Datasheet | Specifications & PDF Download

IXTQ102N20T Power MOSFET

Preliminary Technical Information TrenchHVTM Powe.

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi

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Power MOSFET

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2

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