Preliminary Technical Information TrenchMVTM Powe.
IXTQ220N055T - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc.IXTQ220N055T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 = RDS(on.