Preliminary Technical Information Linear L2TM Pow.
IXYS
IXTQ30N60L2 - Power MOSFET
Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated IXTH30N60L2 IXTQ30N60L2 IX.
INCHANGE
IXTQ30N60L2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·Fast Sw.