IXTQ96N25T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Swi

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Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH96N25T IXTQ96N25T IXTV96N25T VDSS = ID25 =

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