PolarTM Power MOSFET N-Channel Enhancement Mode Av.
INCHANGE
IXTY08N100P - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTY08N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche volta.
IXYS
IXTY08N100P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.