IXTY1R4N100P Datasheet | Specifications & PDF Download

IXTY1R4N100P Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode A.

N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTY1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo

(28 views)

Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω

(26 views)

IXTY1R4N100P Distributor