IXTY2R4N50P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTY2R4N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.75Ω@VGS=10V ·Fully characterized avalanche vol

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

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