IXTY3N60P Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTY3N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V ·Fully characterized avalanche voltag

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N60P IXTA3N60P IXTP3N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ

Rating: 1 ★ (1 votes)