
IXTY4N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor
IXTY4N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag
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PolarTM Power MOSFET N-Channel Enhancement Mode Av.
IXTY4N60P Distributor