IXTY55N075T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTY55N075T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 19.5mΩ@VGS=10V ·Fully characterized avalanche vo

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 R

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