ADVANCED TECHNICAL INFORMATION Trench Power MOSFE.
IXYS Corporation
IXUC160N075 - Trench Power MOSFET
ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS(on) = 75 V 160 A 6.
INCHANGE
IXUC160N075 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ@VGS=10V ·100% a.
