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40N60 - IXSH40N60
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi.30N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.12N60C - IGBT
HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE.25N120 - IXGH25N120
www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES.150N10 - Power MOSFETs
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 15.IXFH24N50 - Power MOSFET
HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE:.80N10 - Power MOSFETs
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80 .IXTQ82N25P - Power MOSFET
PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS.20N60 - IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.N1114LC160 - Phase Control Thyristor
Date:- 02 August 2012 Data Sheet Issue:- 2 Phase Control Thyristor Types N1114LC120 to N1114LC180 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL.IXFH80N65X2 - Power MOSFET
X2-Class HiPerFETTM Power MOSFET IXFH80N65X2 IXFK80N65X2 VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intr.CS601 - Thyristors
www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com DataSheet4U.com .32N50 - N-Channel MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFT 30N50 IXFH/IXFT 32N50 V DSS 500 V 500 V I D25 30 .CLA50E1200HB - High Efficiency Thyristor
CLA 50 E 1200 HB High Efficiency Thyristor Single Thyristor V RRM = I T(AV)M = I T(RMS) = 1200 V 50 A 79 A Part number CLA 50 E 1200 HB 2 1 3 .IXTH75N15 - High Current Power MOSFET
High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25.IXFH26N50 - Power MOSFET
HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE:.CS19-12HO1 - Phase Control Thyristors
CS 19 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A VRSM www.DataSheet4U.com VDSM V 800 1200 VRRM VDRM V 800 1200 Type.IXEN60N120D1 - NPT3 IGBT in miniBLOC package
IXEN 60N120 IXEN 60N120D1 www.DataSheet4U.com NPT3 IGBT in miniBLOC package IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V C G G C miniBLOC, SOT-.7N60C - IXGA7N60C
HiPerFASTTM IGBT LightspeedTM Series IXGA 7N60C IXGP 7N60C VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.7 V = 45 ns Symbol VCES VCGR VGES VGEM IC25 I.IXTQ76N25T - Power MOSFET
TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on) 250V 76A 44m Typical Avalanc.