IXYS Datasheet | Specifications & PDF Download

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC™ CS 20-25mo1F VDRM = VRRM = 2500 V IT(AV) = 18 A ITSM = 200 A Part number C

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH30N60B3 VCES = 600V IC110 = 30A V CE(sat)  1.85V tfi(ty

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INTEGRATED CIRCUITS DIVISION Features • 1.5A Peak Output Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Operating Temperature R

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Date:- 02 August 2012 Data Sheet Issue:- 2 Phase Control Thyristor Types N1114LC120 to N1114LC180 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL

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HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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INTEGRATED CIRCUITS DIVISION Features • 2A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Opera

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ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO

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Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 High Speed PT IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9

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Date:- 21st June, 2016 Data Sheet Issue:- K2 Phase Control Thyristor Types N0180SH120 to N0180SH160 Absolute Maximum Ratings VDRM VDSM VRRM VRSM V

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 IXFM 13 N50 VDSS ID (cont) RDS(on) trr = 500 V

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MMO 140 AC Controller Modules IRMS = 140 A ITAVM = 58 A VRRM = 1200/1600 V VRSM VDSM V 1300 1700 VRRM VDRM V 1200 1600 Typ MMO 140-12io7 MMO

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PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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