IXYS Datasheet | Specifications & PDF Download

High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC™ CS 20-25mo1F VDRM = VRRM = 2500 V IT(AV) = 18 A ITSM = 200 A Part number C

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 5-30 kHz Switching IXXH30N60B3 VCES = 600V IC110 = 30A V CE(sat)  1.85V tfi(ty

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HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ide

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Rectifier Diode Types W2020NC360 to W2020NC450 The data sheet on the subsequent pages of this document is a scanned copy of existing data for this pr

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linea

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WESTCODE An IXYS Company Date:- 4 Aug, 2004 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0500KC25# Absolute Maximum Ratings

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110

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Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0964LC10x to R0964LC12x Absolute Maximum Ratings VDRM VDSM VRRM VRSM

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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INTEGRATED CIRCUITS DIVISION Features • 1.5A Peak Output Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Operating Temperature R

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XPT IGBT Copack Part number IXA60IF1200NA IXA60IF1200NA VCES = I C25 = V = CE(sat) 1200 V 88 A 1.8 V C (3) Backside: isolated (G) 2 E (1+4)

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IXD1209/12 High Speed LDO Regulator with ON/OFF Control FEATURES o Output Current up to 150 mA (300 mA for IXD2109E/H type) o Output Voltage Range f

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www.DataSheet4U.com VHF 15 Half Controlled Single Phase Rectifier Bridge with Freewheeling Diode IdAVM = 21 A VRRM = 800-1600 V VRSM VDSM V 900 13

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linea

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Date:- 2 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0929LC10x to R0929LC12x Absolute Maximum Ratings VDRM VDSM VRRM VRSM V

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WESTCODE An IXYS Company Date:- 12 Jul, 2004 Data Sheet Issue:- 1 Fast Recovery Diode Type M2698Z#250 to M2698Z#350 Old Type No.: SM25-36CXC964 Abs

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