J411 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) ·Collector-Emitter Saturation Voltag

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is a

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monolithic dual n-channel JFETs --~ designed for • • • o - • ~ FET Input Amplifiers • Low and Medium Frequency Amplifiers • Impedance Converters • Pre

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www.vishay.com SQJ411EP Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm PRODUC

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ411K8YRU Surface Mounting Chip LED 3216 FD Type Forward cu

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MJ410, MJ411 High-reliability discrete products and engineering services since 1977 NPN POWER TRANSISTORS FEATURES • Available as “HR” (high reliab

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ411K8YRA Surface Mounting Chip LED 3216 Type Forward curre

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MJ411 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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MJ411 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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