JILIN SINO-MICROELECTRONICS Datasheet | Specifications & PDF Download

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z

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R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High fr

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） 5.0 Ω Qg 8.0 nC Package    LED APPLICATIONS  High

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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N R N-CHANNEL MOSFET JCS4N65F MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson（Vgs=10V） 2.8Ω Qg 27nC   LED APPLICATIONS  High effi

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4202BD IC VCEO PC(TO-92) PC(TO-251) PC(TO-126) MAIN CHARACTERISTICS 1.5A 400V 1W 10W 20

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R 3DD13005K µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D13005K ÔÐØÌ·Æú² ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ Ö÷ÒªÓÃ; ½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßƵ¿ª¹ØçÔ´ ¸ßƵ¹¦ÂÊ±ä» Ò»°ã¹¦ÂÊ·

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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N R N-CHANNEL MOSFET JCS1404 MAIN CHARACTERISTICS Package ID 204 A VDSS 40 V Rdson（@Vgs=10V） 4 mΩ z z UPS APPLICATIONS z High efficiency

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4243D(T/I/M/Z) IC VCEO PC(TO-92) PC(TO-251) PC(TO-126) PC(TO-220) MAIN CHARACTERISTICS

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N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High effic

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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N R N-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson（@Vgs=10V） 1.35 Ω Qg 32 nC    LED APPLICATIONS  H

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CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.

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N R N-CHANNEL MOSFET JCS1404 MAIN CHARACTERISTICS Package ID 204 A VDSS 40 V Rdson（@Vgs=10V） 4 mΩ z z UPS APPLICATIONS z High efficiency

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