Jin Yu Semiconductor Datasheet | Specifications & PDF Download

PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-10.5A = 18mΩ RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30mΩ Features Advanced tre

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2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE, excellent hFE linearity z

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BAT720 SCHOTTKY BARRIER DIODE FEATURES  High Switching Speed  Low Forward Voltage  Guard Ring Protected APPLICATIONS  Voltage Clamping  Protecti

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B0520WS/B0530WS/B0540WS SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conducta

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General purpose transistors (dual transistors) EMH2 SOT-563 FEATURES z Two DTC144Es chip in a package z Mounting possible with SOT-563 automatic mou

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KTA1663 TRANSISTOR (PNP) FEATURES z High current applications z Complementary to KTC4375 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCB

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SWITCHING DIODE FEATURES z Low Forward Voltage Drop z Fast Switching BAT54T/AT/CT/ST SOT-523 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak r

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PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5mΩ RDS(ON), Vgs@4.5V, Ids@12A = 15mΩ Features Advanced trench pr

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SCHOTTKY DIODE FEATURES z Low Turn-on voltage z Fast switching BAS7 0T/-04T/-05T/-06T SOT-523 BAS70T Marking: 7C BAS70-04T Marking: 7D BAS70-05T M

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KTC4075 TRANSISTOR (NPN) FEATURES z z z z SOT-23 1. BASE 2. EMITTER Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 3. COLLECT

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General purpose transistors (dual transistors) EMF5 FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with S

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SWITCHING DIODE FEATURES z Low Forward Voltage Drop z Fast Switching BAT54T/AT/CT/ST SOT-523 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak r

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SWITCHING DIODE FEATURES z Low Forward Voltage Drop z Fast Switching BAT54T/AT/CT/ST SOT-523 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak r

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KTA2015 TRANSISTOR (PNP) FEATURES  Excellent hFE Linearity  Complementary to KTC4076 APPLICATIONS  General Purpose Switching SOT–323 MAXIMUM RA

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SWITCHING DIODE FEATURES z Low Forward Voltage Drop z Fast Switching BAT54T/AT/CT/ST SOT-523 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak r

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SCHOTTK Y DIODE BAS40V SOT-563 FEATURES z Low Forward Voltage Drop z Fast Switching 1 Marking: KAN Maximum Ratings @TA=25℃ Parameter Non-Repetit

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1SS344 SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage  Fast Reverse Recovery Time  High Forward Current APPLICATIONS  High Speed Switching

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General purpose transistors (dual digital transistors) EMB4 FEATURES z Two DTA114T chips in a package Marking: B4 Equivalent circuit (3) (2) (1) R

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SS8 550 TRANSISTOR(PNP) FEATURES  High Collector Current  Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

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SCHOTTKY DIODE FEATURES Surface mount schottky barrier diode arrays BAT54V SOT-563 1 Marking: KAV Maximum Ratings @TA=25℃ Parameter Peak Repetitive

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