JinYu Datasheet | Specifications & PDF Download

TRANSISTOR (PNP) FEATURES z Low frequency power amplifier application z Power switching application SOT-23 1. BASE 2. EMITTER 3. COLLECTOR KTA1298

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench proc

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2SC4672 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Saturation Voltage z Excellent hFE Characteristics z Complements the 2SA1797 1. BASE 2. COLLECTO

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30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.

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KSA1182 TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tst

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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M28 S TRANSISTOR(NPN) SOT–23 FEATURES  Excellent hFE Linearity  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Pa

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2SC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXI

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S901 4W TRANSISTOR(NPN) FEATURES  Complementary to S9015W  Small Surface Mount Package SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

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Isolated transistor and diodes Features z The 2SC2412K and a diodes are housed independently In a package MARKING：L2 UML2N SOT-353 1 TR MAXIMUM RATI

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KTC3876 TRANSISTOR (NPN) SOT-23 FEATURES · High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless oth

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KTC3879 TRANSISTOR (NPN) FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application MAXIMUM RATINGS (

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KTD31 04 TRANSISTOR (NPN) SOT-23 FEATURES ·High emitter-base voltage ·low on resistance MARKING: MAX 1. BASE 2. EMITTER 3.COLLECTOR MAXIMUM RATIN

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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit

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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit

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