JinYu Datasheet | Specifications & PDF Download

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ

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SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced tre

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Three-terminal positive voltage regulator Maximum output current IO: 0.1 A Output voltage VO: 5 V Continuous total dissipation PD : SOT-23-3L 0.35 W (

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TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR M

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1A Adjustable/Fixed Low Dropout Linear Regulator AMS1117 General Description The AMS1117 is a low dropout three-terminal regulator with a dropout of

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DTA124EE/DTA124EUA/DTA124ECA/DTA124EKA/DTA124ESA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverte

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C945 TRANSISTOR (NPN) FEATURE SOT-23 z Excellent hFE Linearity z Low noise z Complementary to A733 1. BASE 2. EMITTER 3. COLLECTOR MARKING:CR·

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench proc

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20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

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M28 S TRANSISTOR(NPN) SOT–23 FEATURES  Excellent hFE Linearity  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Pa

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KTC3876 TRANSISTOR (NPN) SOT-23 FEATURES · High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless oth

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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MMBT3904T TRANSISTOR(NPN) FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted

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2SC4375 TRANSISTOR (NPN) FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Sy

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MMBTH1 0 TRANSISTOR(NPN) SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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XC6206 Series 100mA Low Dropout CMOS Voltage Regulators ■ DESCRIPTION The XC6206 series are precise, low power consumption, high voltage; positive vo

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Three-terminal positive voltage regulator Maximum output current IO: 0.1 A Output voltage VO: 6 V Continuous total dissipation PD : SOT-23-3L 0.35 W (

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MMBTA94 TRANSISTOR(PNP) SOT–23 FEATURES  High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Va

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MMBT2222 TRANSISTOR(NPN) FEATURES  Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Coll

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