JinYu Datasheet | Pinout, Features, Price Comparison & PDF

20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m

20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Adva

XC6206 Series 100mA Low Dropout CMOS Voltage Regulators ■ DESCRIPTION The XC6206 series are precise, low power consumption, high voltage; positive vo

TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR M

S901 2 TRANSISTOR(PNP) FEATURES z Complementary to S9013 z Excellent hFE linearity MARKING: 2T1 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATI

1A Adjustable/Fixed Low Dropout Linear Regulator AMS1117 General Description The AMS1117 is a low dropout three-terminal regulator with a dropout of

Isolated transistor and diodes Features z The 2SC2412K and a diodes are housed independently In a package MARKING：L2 UML2N SOT-353 1 TR MAXIMUM RATI

2SC4672 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Saturation Voltage z Excellent hFE Characteristics z Complements the 2SA1797 1. BASE 2. COLLECTO

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.

General purpose transistors(Isolated transistor and diode) FEATURES 2SC5585 and RB521S-30 chips in a package APPLICATIONS DC / DC converter Motor dri

2SC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXI

DTA124EE/DTA124EUA/DTA124ECA/DTA124EKA/DTA124ESA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverte

DTA124EE/DTA124EUA/DTA124ECA/DTA124EKA/DTA124ESA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverte

2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity z z Complements the 2A1576A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol P

TRANSISTOR (NPN) FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. BF8 20/ BF8 22 SO

KTC3876 TRANSISTOR (NPN) SOT-23 FEATURES · High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless oth

KTA1273 TRANSISTOR (PNP) FEATURES z High Current z Low Voltage z Complementary to KTC3205 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS

2SC4375 TRANSISTOR (NPN) FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Sy