JinYu Datasheet | Specifications & PDF Download

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ

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XC6206 Series 100mA Low Dropout CMOS Voltage Regulators ■ DESCRIPTION The XC6206 series are precise, low power consumption, high voltage; positive vo

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TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR M

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30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.

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20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

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2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity z z Complements the 2A1576A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol P

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2SC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXI

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KTC3879 TRANSISTOR (NPN) FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application MAXIMUM RATINGS (

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MMBT3904T TRANSISTOR(NPN) FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted

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Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a packa

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Three-terminal positive voltage regulator Maximum output current IO: 0.1 A Output voltage VO: 12 V Continuous total dissipation PD : SOT-23-3L 0.35 W

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S901 2 TRANSISTOR(PNP) FEATURES z Complementary to S9013 z Excellent hFE linearity MARKING: 2T1 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATI

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KTC3876 TRANSISTOR (NPN) SOT-23 FEATURES · High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless oth

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DTA124EE/DTA124EUA/DTA124ECA/DTA124EKA/DTA124ESA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverte

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C945 TRANSISTOR (NPN) FEATURE SOT-23 z Excellent hFE Linearity z Low noise z Complementary to A733 1. BASE 2. EMITTER 3. COLLECTOR MARKING:CR·

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m

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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit

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DTA114YE/DTA114YUA/DTA114YKA /DTA114YSA/DTA114YCA TRANSISTOR(PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circui

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DTA114YE/DTA114YUA/DTA114YKA /DTA114YSA/DTA114YCA TRANSISTOR(PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circui

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