JinYu Datasheet | Specifications & PDF Download

KTC3876 TRANSISTOR (NPN) SOT-23 FEATURES · High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless oth

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TRANSISTOR (PNP) FEATURES z Low frequency power amplifier application z Power switching application SOT-23 1. BASE 2. EMITTER 3. COLLECTOR KTA1298

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2SD965A TRANSISTOR (NPN) FEATURES z Audio amplifier z Flash unit of camera z Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Sym

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m

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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit

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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES · Built-in bias resistors enable the configuration of an inverter circuit

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DTA114YE/DTA114YUA/DTA114YKA /DTA114YSA/DTA114YCA TRANSISTOR(PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circui

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DTA124EE/DTA124EUA/DTA124ECA/DTA124EKA/DTA124ESA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverte

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DTA124EE/DTA124EUA/DTA124ECA/DTA124EKA/DTA124ESA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverte

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MMBT58 9 TRANSISTOR(PNP) SOT-23 FEATURES z High current surface mount PNP silicon switching transistor for Load management in portable applications

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MMBTA43 TRANSISTOR(NPN) SOT–23 FEATURES  High Voltage Application  Telephone Application  Complementary to MMBTA93 MARKING:ABX MAXIMUM RATINGS

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench proc

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MMBT3904T TRANSISTOR(NPN) FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted

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2SC4672 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Saturation Voltage z Excellent hFE Characteristics z Complements the 2SA1797 1. BASE 2. COLLECTO

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