JinYu Datasheet | Specifications & PDF Download

TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR M

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C945 TRANSISTOR (NPN) FEATURE SOT-23 z Excellent hFE Linearity z Low noise z Complementary to A733 1. BASE 2. EMITTER 3. COLLECTOR MARKING:CR·

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30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ

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XC6206 Series 100mA Low Dropout CMOS Voltage Regulators ■ DESCRIPTION The XC6206 series are precise, low power consumption, high voltage; positive vo

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20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

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30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.

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MMBT3904T TRANSISTOR(NPN) FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted

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KTA1273 TRANSISTOR (PNP) FEATURES z High Current z Low Voltage z Complementary to KTC3205 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS

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1A Adjustable/Fixed Low Dropout Linear Regulator AMS1117 General Description The AMS1117 is a low dropout three-terminal regulator with a dropout of

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Isolated transistor and diodes Features z The 2SC2412K and a diodes are housed independently In a package MARKING：L2 UML2N SOT-353 1 TR MAXIMUM RATI

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m

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2SC4081 TRANSISTOR (NPN) SOT-323 FEATURES Excellent hFE linearity z z Complements the 2A1576A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol P

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S901 2 TRANSISTOR(PNP) FEATURES z Complementary to S9013 z Excellent hFE linearity MARKING: 2T1 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATI

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80mΩ Features Advanced trench proc

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2SC4672 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Saturation Voltage z Excellent hFE Characteristics z Complements the 2SA1797 1. BASE 2. COLLECTO

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TRANSISTOR (PNP) FEATURES z Low frequency power amplifier application z Power switching application SOT-23 1. BASE 2. EMITTER 3. COLLECTOR KTA1298

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SILICON PLANAR ZENER DIODES Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance ap

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2SC4374 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXI

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