2SK1317 Silicon N Channel MOS FET Application Hig.
Renesas
K1317 - Silicon N-Channel MOSFET
2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low.
Hitachi Semiconductor
K1317 - 2SK1317
2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500.
Renesas
2SK1317 - Silicon N-Channel MOSFET
2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low.
Hitachi Semiconductor
2SK1317 - Silicon N-Channel MOSFET
2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switchi.