K134 Datasheet | Specifications & PDF Download

LF BUK9K134-100E 10 December 2013 PA K 56D Dual N-channel 100 V, 159 mΩ logic level MOSFET Product data sheet 1. General description Dual logic

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IDT LA-1 NSE System Level Architecture Model for Intel® IXA SDK Microengine Development Environment Introduction Evolving network speeds require criti

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2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo

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2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • •

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ASAHI KASEI [AK134/135] IMPORTANT NOTICE • These products and their specifications are subject to change without notice. Before considering any use

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FE

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot

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isc N-Channel MOSFET Transistor 2SK1340 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·M

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2SK1342 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switch

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BUK7K134-100E Dual N-channel 100 V, 121 mΩ standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-

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BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channe

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K1341-VB www.VBsemi.com K1341-VB Datasheet /$IBOOFM
900V (D-S)4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω)

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2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

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