K155 Datasheet | Specifications & PDF Download

К155ЛА3 Микросхема представляет собой четыре логических элемента 2И-НЕ. Корпус К155ЛА3 типа 201.14-1, масса не более 1 г и у КМ155ЛА3 типа 201.14-8, м

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К155ЛАЗ, КМ155ЛАЗ, КБ155ЛАЗ-4 Микросхемы представляют собой 4 логических элемента 2И-НЕ. Содержат 56 интегральных элементов. Корпус типа 201.14-1, мас

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ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 HIGH POWER DUAL OPERATIONAL AMPLIFIER 155 (315) 701-6751 FEATURES

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650 (Min) ·Minimum Lot-to-Lot variations for

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http://www.Datasheet4U.com

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Electroytic Capacitors Motor - Starting Capacitors Type MDK Features double-potted design protection according to IP 54 high current loading connect

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isc N-Channel MOSFET Transistor 2SK1550 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600 (Min) ·Minimum Lot-to-Lot variat

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http://www.Datasheet4U.com

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=650 (Min) ·Minimum Lot-to-Lot variations for

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Minebea-Matsushita Motor Corporation eMINEBEA. COM Outline • LEAD WIRE SIDE -HSG: XHP-6 -PIN : SXH-001T-P0.6 JST S6B - XH-A-1 20.4 (0.80) PIN NO. 61

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MOSFETs Silicon N-Channel MOS (DTMOS) TK155A65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) =

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www.vishay.com SiHK155N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 10 x 12 TAB 8 67 45 23 1 Drain tab Gate pin 1 Driver source pin 2 Sour

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NOT RECOMMENDED FOR NEW DESIGNS MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth 

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MOSFETs Silicon N-Channel MOS (DTMOS�) TK155E65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) =

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MOSFETs Silicon N-Channel MOS (DTMOS�) TK155U65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) =

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