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K155LA3 - AND-NOT logic
К155ЛА3 Микросхема представляет собой четыре логических элемента 2И-НЕ. Корпус К155ЛА3 типа 201.14-1, масса не более 1 г и у КМ155ЛА3 типа 201.14-8, м.K155LA3 - AND-NOT logic
К155ЛАЗ, КМ155ЛАЗ, КБ155ЛАЗ-4 Микросхемы представляют собой 4 логических элемента 2И-НЕ. Содержат 56 интегральных элементов. Корпус типа 201.14-1, мас.23KM-K155U - Standard Hybrid Step Motors
Minebea-Matsushita Motor Corporation eMINEBEA. COM Outline • LEAD WIRE SIDE -HSG: XHP-6 -PIN : SXH-001T-P0.6 JST S6B - XH-A-1 20.4 (0.80) PIN NO. 61.2SK155 - SI N-CHANNEL JUNCTION FET
http://www.Datasheet4U.com .MSK155 - HIGH POWER DUAL OPERATIONAL AMPLIFIER
ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 HIGH POWER DUAL OPERATIONAL AMPLIFIER 155 (315) 701-6751 FEATURES.TK155U65Z - Silicon N-Channel MOSFET
MOSFETs Silicon N-Channel MOS (DTMOS�) TK155U65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = .TK155A65Z - Silicon N-Channel MOSFET
MOSFETs Silicon N-Channel MOS (DTMOS) TK155A65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = .SiHK155N60E - Power MOSFET
www.vishay.com SiHK155N60E Vishay Siliconix E Series Power MOSFET PowerPAK® 10 x 12 TAB 8 67 45 23 1 Drain tab Gate pin 1 Driver source pin 2 Sour.MDK155 - Film-Foil Capacitors
Electroytic Capacitors Motor - Starting Capacitors Type MDK Features double-potted design protection according to IP 54 high current loading connect.HLMP-K155 - DOUBLE HETEROJUNCTION AIGaAs LOW CURRENT RED LED LAMPS
DOUBLE HETEROJUNCTION AIGaAs LOW CURRENT RED LED LAMPS T-1 3/4 (5mm) T-100 (3mm) HLMP-D150A HLMP-D155A HLMP-K150 HLMP-K155 FEATURES • Wide Viewing Ang.2SK1550 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK1550 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600 (Min) ·Minimum Lot-to-Lot variat.2SK1553 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650 (Min) ·Minimum Lot-to-Lot variations for .2SK1554 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=650 (Min) ·Minimum Lot-to-Lot variations for .RJK1555DPA - N-Channel Power MOSFET
RJK1555DPA Silicon N Channel MOS FET High Speed Power Switching REJ03G1783-0100 Rev.1.00 Apr 02, 2009 Features • Low on-resistance • Low drive curren.