K1611 Datasheet | Specifications & PDF Download

Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-spe

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for

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Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-spe

(13 views)