K429 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor 2SK429S FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R

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CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

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isc N-Channel MOSFET Transistor 2SK429L FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R

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CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·100% avala

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CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

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CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

(9 views)

CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

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CBB13（PPN） Film Foil Capacitors RoHS COMPLIANT ■Reference Standard ■Outline Drawing GB10188 （IEC384-13） ■Structures Material: Polypropylene film El

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