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K9F5608U0 Datasheet, Features, Application

K9F5608U0 32M x 8 Bit NAND Flash Memory

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-E.

Samsung semiconductor
rating-1 7

K9F5608U0C-Y - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 4

K9F5608U0C-HIB0 - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 4

K9F5608U0D - 32M x 8 Bit NAND Flash Memory

K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODU.
Samsung
rating-1 3

K9F5608U0C - NAND Flash Memory

K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision.
Samsung semiconductor
rating-1 3

K9F5608U0B-DCB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.
Samsung semiconductor
rating-1 3

K9F5608U0M- - 32M x 8 Bit NAND Flash Memory

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 3

K9F5608U0M-YIB0 - 32M x 8 Bit NAND Flash Memory

K9F5608U0M-YCB0,K9F5608U0M-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial .
Samsung semiconductor
rating-1 2

K9F5608U0 - 32M x 8 Bit NAND Flash Memory

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 2

K9F5608U0B-DIB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.
Samsung semiconductor
rating-1 2

K9F5608U0C-F - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 2

K9F5608U0C-HCB0 - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 2

K9F5608U0C-V - 512Mb/256Mb 1.8V NAND Flash Errata

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Samsung semiconductor
rating-1 2

K9F5608U0C-V - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 2

K9F5608U0C-VCB0 - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 2

K9F5608U0C-YCB0 - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 2

K9F5608U0C-YIB0 - 512Mb/256Mb 1.8V NAND Flash Errata

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb.
Samsung semiconductor
rating-1 1

K9F5608U0A - 32M x 8 Bit NAND Flash Memory

K9F5608U0A-YCB0,K9F5608U0A-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 Initial issue. .
Samsung semiconductor
rating-1 1

K9F5608U0A-YCB0 - 32M x 8 Bit NAND Flash Memory

K9F5608U0A-YCB0,K9F5608U0A-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 Initial issue. .
Samsung semiconductor
rating-1 1

K9F5608U0A-YIB0 - 32M x 8 Bit NAND Flash Memory

K9F5608U0A-YCB0,K9F5608U0A-YIB0 Document Title 32M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 Initial issue. .
Samsung semiconductor
rating-1 1

K9F5608U0B - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.
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