KEDA Datasheet | Specifications & PDF Download

N-channel MOSFET Features  500V,20A  RDS(on)=0.21Ω @VGS=10V,ID=10A  High speed switching  High ruggedness  100% avalanche tested  Improved dv/dt

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KDG30N120H2 IGBT Features  1200V,30A,VCE(sat)(typ.)=2.1V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

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IGBT Features  1200V,20A,VCE(sat)(typ.)=2.1V@VGE=15V，20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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IGBT Features  600V,50A  VCE(sat)(typ.)=2.5V@VGE=15V,IC=50A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Sq

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KDG40R12KT3 IGBT Module Features：  IGBT Inverter Short Circuit Rated 10μs  IGBT Inverter Low Saturation Voltage  Low Switching Loss  Low Stray Ind

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KDF260P N-Channel MOSFET Preliminary Features 200V,56A,Rds(on)(typ)=0.04Ω@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv

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IGBT Features  1200V,40A  VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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KDG25N120H1 IGBT Features  1200V,25A,VCE(sat)(typ.)=2.5V@VGE=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms

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IGBT Features  1200V,25A  VCE(sat)(typ.)=2.2V@VGE=15V,IC=25A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  S

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IGBT Features  1200V,15A  VCE(sat)(typ.)=2.4V@VGE=15V,IC=15A  High speed switching  Higher system efficiency  Soft current turn-off waveforms KD

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POWER MOSFET Features  75V,80A N-Channel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS=10V,ID=40A  High ruggedness  Fast switching  100% avalanche tested  Exc

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KDF75N03P N-Channel MOSFET Preliminary Features 75V,73A,Rds(on)(typ)=11mΩ@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv

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IGBT Features  1200V,20A  VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms KD

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ALUMINUM ELECTROLYTIC CAPACITORS KL Low Leakage Current series Standard low leakage current series. Compliant to the RoHS directive (2002/95/EC). VR

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N-Channel MOSFET Preliminary Features 20V,6A,Rds(on)<37.5mΩ@Vgs=2.5V 20V,6A,Rds(on)<27.5mΩ@Vgs=4.5V Fast Switching Surface Mount Package Ideal for

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KDF60N04P N-Channel MOSFET Preliminary Features 60V,65A,Rds(on)(typ)=8.5mΩ@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved d

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ALUMINUM ELECTROLYTIC CAPACITORS KL Low Leakage Current series Standard low leakage current series. Compliant to the RoHS directive (2002/95/EC). VR

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FAST RECOVER DIODE Features  600V,15A  Soft Recovery  Operation Temperature ＜175℃  Planar Construction Applications  Freewheeling,Snubber,Clamp 

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