KNX Datasheet | Specifications & PDF Download

KIA SEMICONDUCTORS 20A，500V N-CHANNEL MOSFET 1.General Features n Proprietary New Planar Technology n RDS(ON),typ.=0.24Ω@VGS=10V n Low Gate Charge M

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Note Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this PDF catalog to prevent smoking and/or

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CFSKN X Series FM CERAMIC FILTERS Description • Low insertion loss design for lower gain dispersion in transceiver applications. Dimensions Features

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KIA SEMICONDUCTORS 85A，30V N-CHANNEL MOSFET 1. Features n RDS(on)=4.5mΩ@ VGS=10V n Lead free and Green Device Available n Low Rds-on to Minimize Con

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R6004KNX 　　Nch 600V 4A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures 1

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R6509KNX 　　Nch 650V 9A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.585Ω ID ±9A TO-220FM PD 48W 　 　　　　　　 lFeatures 1)

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R6530KNX 　　Nch 650V 30A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 86W lFeatures 1) Low on-resistance 2) Ultra fast switc

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R6535KNX3 Nch 650V 35A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.115Ω ±35A 370W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parall

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R6524KNX3 Nch 650V 24A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.185Ω ±24A 253W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parall

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isc N-Channel MOSFET Transistor R6504KNX FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor R6009KNX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor R6006KNX FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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isc N-Channel MOSFET Transistor R6524KNX FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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R6504KNX 　　Nch 650V 4A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 1.050Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures

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isc N-Channel MOSFET Transistor R6509KNX FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

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STKNX Datasheet Miniature KNX transceiver with voltage regulators and microcontroller support VFQFPN24 (4 x 4 x 1.0 mm, 0.5 mm pitch) Features • Ver

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R6530KNX3 Nch 650V 30A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 307W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parall

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