KNX Datasheet | Specifications & PDF Download

Note Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this PDF catalog to prevent smoking and/or

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R6004KNX 　　Nch 600V 4A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures 1

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R6530KNX 　　Nch 650V 30A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 86W lFeatures 1) Low on-resistance 2) Ultra fast switc

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R6530KNX3 Nch 650V 30A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.140Ω ±30A 307W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parall

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isc N-Channel MOSFET Transistor R6524KNX FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor R6520KNX FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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R6520KNX3 Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 220W lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parall

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isc N-Channel MOSFET Transistor R6004KNX FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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www.DataSheet4U.com Loose Taped Fig.1 Fig.2 metallized polyPROPYLENE film capacitor SELF-HEALING PROPERTIES Typical applications: interference supp

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R6011KNX 　　Nch 600V 11A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.39Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1

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isc N-Channel MOSFET Transistor R6006KNX FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi

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R6535KNX3 Nch 650V 35A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.115Ω ±35A 370W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parall

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R6524KNX3 Nch 650V 24A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.185Ω ±24A 253W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parall

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isc N-Channel MOSFET Transistor R6530KNX1 FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor R6530KNX FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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R6020KNX 　　Nch 600V 20A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.196Ω ID ±20A TO-220FM PD 68W 　 　　　　　　 lFeatures

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CFSKN X Series FM CERAMIC FILTERS Description • Low insertion loss design for lower gain dispersion in transceiver applications. Dimensions Features

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R6007KNX 　　Nch 600V 7A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.62Ω ID ±7A TO-220FM PD 46W 　 　　　　　　 lFeatures 1)

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