KSD-80 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor KSD880 DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Complement to KSB8

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KSD880 KSD880 Low Frequency Power Amplifier • Complement to KSB834 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolut

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5080 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·

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KSD Series Thermal Protectors Dimensions (units in mm) Materials Casing: Plastic and/or Metal Operating Temperature 60℃ to 150℃ Tolerance ±5℃ Reset

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isc Silicon NPN Power Transistor DESCRIPTION ·Complement to KSB834W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performan

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J. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Trans

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