KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON T.
Fairchild Semiconductor
KSE803 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT.
