DISCRETE SEMICONDUCTOR Transistors •Bipolar Tra.
INCHANGE
KT815A - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good L.
Integral
KT815A - Transistors
DISCRETE SEMICONDUCTOR Transistors •Bipolar Transistors Part КТ220А9 КТ220Б9 КТ220В9 КТ220Г9 КТ3102АM КТ3102БM КТ3102ВM КТ3102ГM КТ3102ДM КТ3102ЕM КТ.