isc Silicon PNP Power Transistor DESCRIPTION ·Co.
KTB1367 - Silicon PNP Power Transistors
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC.KTB1367 - TRIPLE DIFFUSED PNP TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage :.