KTC3265_GalaxySemi Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES z High DC curren

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE:100-320.  Low saturation voltage. Pb Lead-fr

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BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z z z High DC current gain: hFE:100-320 Low saturation voltage. Suitable for

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Elektronische Bauelemente KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor FEATURE High DC current gain Complementary to KTA1298 CLASSIFICATI

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SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100 320. Low

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KTC3265 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Volt

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SMD Type NPN Transistors KTC3265 Transistors ■ Features ● High DC Current Gain ● Low Saturation Voltage ● Small Package ● Complementary to KTA1298

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