LGE Datasheet | Specifications & PDF Download

2SD400 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE Features — Low-Frequency power Amp, Electronic Governor Applications TO

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78L05 Three-terminal positive voltage regulator 1 2 3 Features — Maximum Output current IO: 0.1 A — Output voltage VO: 5 V — Continuous total dissipa

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W005-W10 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak

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W005-W10 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak

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W005-W10 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features Rating to 1000V PRV Surge overload rating to 30 Amperes peak

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BYG21K-BYG21M Surface Mount Fast Recovery Rectifiers Features Glass passivated junction chip For surface mounted application Low profile package Buil

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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BT137-600E Sensitive Gate Triacs Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirection

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Features Glass Passivated Die Construction 3000W Peak Pulse Power Dissipation 5.0V – 170V Standoff Voltage Uni- and Bi-Directional Versions Av

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3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ u

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LL4150 Fast Switching Surface Mount Diode MINI MELF Features Ideal for Fast Logic Applications Ultra Fast Switching High Reliability High Conductanc

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1N5711W 1N5711WS 1N5711L Small Signal Schottky Barrier Diode Features  Low forward voltage drop  Fast switching speed  Low capacitance  Guard rin

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Features Metal-Semiconductor junction with guard ring Epitaxial construction For use in low voltage,high frequency inverters free xxxx wheeling,and po

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Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak RBV

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10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:201

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BYG21K-BYG21M Surface Mount Fast Recovery Rectifiers Features Glass passivated junction chip For surface mounted application Low profile package Buil

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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HCX-3SB(16MHz) SMD Quartz Crystal Resonator 1. QUARTZ CRYSTAL UNIT SPECIFICATION Item 1. Production type Specifications Symbol Min Type Max Unit

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SZ55 Series 3W Silicon Zener Diodes SMA/DO-214AC Features Complete Voltage Range 3.9 to 200 Volts High peak reverse power dissipation High reliabilit

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BY550-50--BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A Features Low cost Diffused junction Low leakage Low forw

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