LINGXUN Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

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MUR1220CT/FCT/CS ULTRAFAST RECOVERY RECTIFIERS VOLTAGE 200 Volt CURRENT 12 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabili

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MURF1020-MURF1060 Ultra Fast Recovery Diodes A A C A=Anode, C=Cathode VRSM V MURF1020 MURF1040 MURF1050 MURF1060 200 400 500 600 Dimensions ITO-

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MUR6060PT ULTRAFAST RECOVERY RECTIFIERS VOLTAGE 600 Volt CURRENT 60 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Clas

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier condu

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Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier condu

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MUR1220CT/FCT/CS ULTRAFAST RECOVERY RECTIFIERS VOLTAGE 200 Volt CURRENT 12 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabili

(6 views)

N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

(6 views)

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier condu

(5 views)

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier condu

(5 views)

MUR1020-MUR1060 Ultra Fast Recovery Diodes C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode MUR1020 MUR1040 MUR1050 MUR1060 VRSM V 200 400 500 600

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MURF1020-MURF1060 Ultra Fast Recovery Diodes A A C A=Anode, C=Cathode VRSM V MURF1020 MURF1040 MURF1050 MURF1060 200 400 500 600 Dimensions ITO-

(5 views)

N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

(5 views)

N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

(5 views)

MUR1020-MUR1060 Ultra Fast Recovery Diodes C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode MUR1020 MUR1040 MUR1050 MUR1060 VRSM V 200 400 500 600

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MUR1020-MUR1060 Ultra Fast Recovery Diodes C(TAB) A A C C A=Anode, C=Cathode, TAB=Cathode MUR1020 MUR1040 MUR1050 MUR1060 VRSM V 200 400 500 600

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MUR3060/CT/FCT/DC/PT ULTRAFAST RECOVERY RECTIFIERS VOLTAGE 600 Volt CURRENT 30 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabil

(4 views)

MUR3060/CT/FCT/DC/PT ULTRAFAST RECOVERY RECTIFIERS VOLTAGE 600 Volt CURRENT 30 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabil

(4 views)

N-Channel Enhancement Mode Power MOSFET CS20N65A MAIN CHARACTERISTICS ID VDSS RDSON-max （@VGS=10V） QG-typ 20A 650V 0.5Ω 58nC CS20N65A1/TO-220AB F

(4 views)

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A FEATURES • Metal silicon junction, majority carrier condu

(3 views)