Leiditech Datasheet | Specifications & PDF Download

BTRD10D01 ULTRA LOW CAPACITANCE TVS DIODE ARRAY Features • Ultra low capacitance: 0.3pF typical (I/O to I/O) • Ultra low leakage: nA level • Low ope

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Description The L Series are designed to protect baseband equipment such as modems, line cards, CPE and DSL from damaging overvoltage transients. The

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Description The L Series are designed to protect baseband equipment such as modems, line cards, CPE and DSL from damaging overvoltage transients. The

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SM8S Series 6600W Transient Voltage Suppressor DESCRIPTION: SM8S Series TVS diodes can be used in sensitive electronics protection against voltage tr

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Metal Oxide Varistors Varistor>10D180~182KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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TPD4E05U06DQAR ULTRA LOW CAPACITANCE TVS DIODE ARRAY Features • Ultra low capacitance: 0.3pF typical (I/O to I/O) • Ultra low leakage: nA level • Lo

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Metal Oxide Varistors Varistor>07D180~821KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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BDFN1C051R 1-Line Ultra Low Capacitance Bi-directional TVS Diode Features ● Ultra small package: 0.6x0.3x0.3mm ● Ultra low capacitance: 0.25pF typica

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SM8S Series 6600W Transient Voltage Suppressor DESCRIPTION: SM8S Series TVS diodes can be used in sensitive electronics protection against voltage tr

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SM8S Series 6600W Transient Voltage Suppressor DESCRIPTION: SM8S Series TVS diodes can be used in sensitive electronics protection against voltage tr

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3KP Series 3000W Transient Voltage Suppressor DESCRIPTION: The 3KP series of high current uni/bi-directional transient suppressors are designed for A.

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Metal Oxide Varistors Varistor>07D180~821KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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Metal Oxide Varistors Varistor>07D180~821KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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LC15CI Ultra Low Capacitance Bi-Directional TVS Diode Array Features ● Ultra low leakage: nA level ● Operating voltage: 15V ● Low clamping voltage ●

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Features ● Ultra low leakage: nA level ● Operating voltage: 12V ● Low clamping voltage ● Complies with following standards: – IEC 61000-4-2 (ESD) immu

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ESDBU5V0Y1 ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features ● Ultra low leakage: nA level ● Operating voltage: 5V ● Low clamping voltage ● Comp

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Features  Protects one data line  Ultra low leakage: nA level  Operating voltage: 3.3V  Ultra low clamping voltage  Complies with following stand

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ULC0524PA ULTRA LOW CAPACITANCE TVS DIODE ARRAY Features  Ultra low capacitance: 0.3pF typical (I/O to I/O)  Ultra low leakage: nA level  Operati

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Metal Oxide Varistors Varistor>25D180~182KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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Metal Oxide Varistors Varistor>25D180~182KJ Series Applications MOV • Transistor, diode, IC, thyristor or triac semiconductor protection. • Surge p

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