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L8050QLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar t.UF4007 - (UF4001 - UF4007) SUPER FAST DIODES
LESHAN RADIO COMPANY, LTD. UF4001 thru UF4007 1.Feature & Dimensions * Plastic package has Underwriters Laboratories Ultrafast Rectifiers Flammab.LMUN2133LT3 - Bias Resistor Transistors
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of d.LBAS21LT1 - Switching Diode
LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1 FETURE • Pb-Free Package is available. 3 1 2 MAXIMUM RATINGS Rating Continuous .LBAS21LT1G - High Voltage Switching Diode
LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G S-LBAS21LT1G FEATURE • We declare that the material of product compliance with R.LBAV99LT3G - Dual Series Switching Diode
LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode • We declare that the material of product compliance with RoHS requirements. • S- Prefix for A.D5SB60 - High Current Glass Passivated Molding Single-Phase Bridge Rectifier
.FR207 - 2A FAST RECOVERY DIODES
LESHAN RADIO COMPANY, LTD. FR201 thru FR207 1.Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 *.L8050QLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar ty.LBAV99WT3G - Dual Series Switching Diodes
LESHAN RADIO COMPANY, LTD. Dual Series Switching Diodes Features z We declare that the material of product compliance with RoHS requirements. z S- Pr.LBAS21LT3G - High Voltage Switching Diode
LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G S-LBAS21LT1G FEATURE • We declare that the material of product compliance with R.LBAV99LT1G - Dual Series Switching Diode
LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode • We declare that the material of product compliance with RoHS requirements. • S- Prefix for A.LBC817-25WT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirem.LBC817-25WT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirem.LBC817-25LT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. LBC8.LBC817-25LT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. LBC8.LBSS138LT1G - Power MOSFET
LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable.FR154 - 1.5A FAST RECOVERY DIODES
LESHAN RADIO COMPANY, LTD. FR151 thru FR157 1.Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 *.