M-2012L Datasheet | Specifications & PDF Download

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ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VG

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ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.1

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www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Description This F

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KPT-2012LZGCK-3.0U 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode E

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DATA SHEET WIRELESS COMPONENTS COMBO BLF2012LM31R2400A 2.4-2.5 GHZ 2012 Series Product Specification – April 23, 2013 V.0 WIRELESS COMPONENTS Combo

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Sealed Power Inductors - LVS Series LVS Series LVS series, an automatic assembly power inductor, is shielded with magnetic resin and suitable for the

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TYS252012L SMD Power Inductor Series USA: +1.866.928.8181 Europe: +49.0.8031.2460.0 Asia: +86.755.2714.1166 www.lairdtech.com FEATURES Pb • Magnet

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l Se ec te U. L. G 39 CO 716 E R #E d P Fi le k ac ag es * NI ZE D * TO-220 *TO-218 *TO-218X TO-252 D-Pak TO-263 D 2 Pak TO-251 V-Pak M

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l Se ec te U. L. G 39 CO 716 E R #E d P Fi le k ac ag es * NI ZE D * TO-220 *TO-218 *TO-218X TO-252 D-Pak TO-263 D 2 Pak TO-251 V-Pak M

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APTD2012LZGCK 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS  The Green source color devices are made with InGaN on Sapphire Light Emitting Diode  Ele

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