.
NIC
NAZT331M50V12.5X14KLBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • AVAILABLE WITH ANTI-VIBRATION WIDE TE.
NIC
NAZT330M50V6.3X8NBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • AVAILABLE WITH ANTI-VIBRATION WIDE TE.
Micron
MT38M5041A3034EZZI.XR6 - Parallel NOR and PSRAM 56-Ball MCP Combination Memory
56-Ball MCP: 256Mb/512Mb Parallel NOR and 128Mb PSRAM Features Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38M4041A3034EZZI.XK6 MT38M5041A.
NIC
NAWT330M50V8X10.5LBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING SUIT FOR HIGH TEMPERATURE REFLOW .
NIC
NATT331M50V16X17JLSF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING AVAILABLE WITH ANTI-VIBRATION W.
NIC
NATT331M50V12.5X14KLBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING AVAILABLE WITH ANTI-VIBRATION W.
NIC
NATT330M50V8X10.5NBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING AVAILABLE WITH ANTI-VIBRATION W.
NIC
NATT330M50V6.3X8NBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING AVAILABLE WITH ANTI-VIBRATION W.
NIC
NATT3R3M50V6.3X6.3NBF - Surface Mount Aluminum Electrolytic Capacitors
Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING AVAILABLE WITH ANTI-VIBRATION W.
ST Microelectronics
M54HCT30 - 8 INPUT NAND GATE
M54HCT30 M74HCT30 8 INPUT NAND GATE . . . . . . . HIGH SPEED tPD = 15 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C C.
ST Microelectronics
M54HCT32 - QUAD 2-INPUT OR GATE
M54HCT32 M74HCT32 QUAD 2-INPUT OR GATE . . . . . . . HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °.
ST Microelectronics
M54HCT367 - HEX BUS BUFFER
M54/M74HCT367 M54/M74HCT368 HEX BUS BUFFER (3-STATE) HCT367 NON INVERTING, HCT368 INVERTING . . . . . . . HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V.
ST Microelectronics
M54HCT368 - HEX BUS BUFFER
M54/M74HCT367 M54/M74HCT368 HEX BUS BUFFER (3-STATE) HCT367 NON INVERTING, HCT368 INVERTING . . . . . . . HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V.
ST Microelectronics
M54HCT373 - Octal D-Type Latch
M54/74HCT373 M54/74HCT533 OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT HCT373 NON INVERTING - HCT533 INVERTING . . . . . . . HIGH SPEED tPD = 17 ns (TYP.).
ST Microelectronics
M54HCT374 - Octal D-type Flip Flops
M54/74HCT374 M54/74HCT534 OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT HCT374 NON INVERTING - HCT534 INVERTING . . . . . . . HIGH SPEED fMAX = 62 MHz .
ST Microelectronics
M54HCT393 - DUAL BINARY COUNTER
M54HCT393 M74HCT393 DUAL BINARY COUNTER . . . . . . . HIGH SPEED fMAX = 80 MHz (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 2.
Renesas
M5M29GT320VP-80 - CMOS Block Erase Flash Memory
www.DataSheet4U.com Renesas LSIs 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT.
