GaN on SiC Transistor, 8 W, 28 V DC - 6 GHz Featu.
MACOM
MAPC-A3005-AD - GaN on SiC Transistor
GaN on SiC Transistor, 8 W, 28 V DC - 6 GHz Features • Saturated Power: 8 W • Drain Efficiency: 69% • Small Signal Gain: 19 dB • DFN 3 x 4, 12 L Plas.
