MBRF8100_GalaxySemi Datasheet | Specifications & PDF Download

MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guard

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BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For

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MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guard

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MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guard

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MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guard

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MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guard

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MBRF830 thru MBRF8100 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes FEATURES ●Metal of silicon rectifi

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MBRF830-MBRF8100 Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features High s urge capacity. For us e in low voltage, high fr

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Z ibo Seno Electronic Engineering Co., Ltd. MBRF840-MBRF8200 8.0 A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Ideally Suited for Au

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